Single Frequency Laser (for resonance-matching narrow-tuning stand-alone emitters)
Gain Chips (for use in widely tunable narrow linewidth Extended Cavity Setups)
Tapered Amplifier (for Master Oscillator Power Amplifier Setups)
|Mission||Approach||NarrowTunability||Wide Tunability||Power Boost|
|Atom/Ion*||Wavelength (SHG)||Single Frequency LD||Gain Chip|
|Rb||780, 795 nm|
|Cs||852, 894 nm|
|Ca, Sr (SHG)||922 nm (461 nm)||DFB-922 (coming soon)||RWE-980|
|RWE-1120 (coming soon)||n/a|
Narrow Tunability: DFB lasers designed and selected to hit certain absorption lines can be operated typically by +/-1 nm with less than 1 MHz around the target line.
Wide Tunability: Broader tunabilities up to 100 nm with even narrower linewidths in the 100 kHz range simultaneously can be obtained by operating gain chips in Extended Cavity Diode Laser setups, such as Littman or Littrow.
Power Boost: Tapered Amplifier designed to combine excellent beam with highest output power from a single emitter are the first choice for Master Oscillator Power Amplifier setups, inheriting all properties of a seed source.